Virtual Design and Qualification of IC Backend Structures

R. van Silfhout, O. van der Sluis, W. V. van Driel, J. Janssen, G.Q. Zhang
{"title":"Virtual Design and Qualification of IC Backend Structures","authors":"R. van Silfhout, O. van der Sluis, W. V. van Driel, J. Janssen, G.Q. Zhang","doi":"10.1109/ESIME.2006.1643962","DOIUrl":null,"url":null,"abstract":"For Integrated Circuit (IC) wafer backend development, process developers have to design robust backend structures that guarantee both functionality and reliability during waferfab processes, packaging, qualification tests and lifetime. Figure 1 shows a simplified diagram for the design (and redesign) cycle forevelopment. Subsequently, package development IC development. Subsequently, package develop t . inherited runs a similar cycle. By using reliability modell relate it to the interaction of IC and package assembly, such as IC/compound delamination, we aim at integrating IC and packge prototyping in order to develop reliable IC packages faster. This paper presents parts of our research to approach thermo-mechanical IC reliability by virtually designing and quaifying IC backend structures in both IC processing, packaging and testing processes. By combining experimental and numerical results, targeted failure modes and mechanisms as well as their interactions are understood. It is found that delamination is the key trigger for passivation cracking and metal shift. Even more, the layout of interconnect metals in the backend of ICs has a major effect on under bond-pad wir delamination observed after wafer probing an wire ing. Reliable predictive modelling approaches enable IC package development towards a first-time-right practice.","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"微纳电子与智能制造","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ESIME.2006.1643962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

For Integrated Circuit (IC) wafer backend development, process developers have to design robust backend structures that guarantee both functionality and reliability during waferfab processes, packaging, qualification tests and lifetime. Figure 1 shows a simplified diagram for the design (and redesign) cycle forevelopment. Subsequently, package development IC development. Subsequently, package develop t . inherited runs a similar cycle. By using reliability modell relate it to the interaction of IC and package assembly, such as IC/compound delamination, we aim at integrating IC and packge prototyping in order to develop reliable IC packages faster. This paper presents parts of our research to approach thermo-mechanical IC reliability by virtually designing and quaifying IC backend structures in both IC processing, packaging and testing processes. By combining experimental and numerical results, targeted failure modes and mechanisms as well as their interactions are understood. It is found that delamination is the key trigger for passivation cracking and metal shift. Even more, the layout of interconnect metals in the backend of ICs has a major effect on under bond-pad wir delamination observed after wafer probing an wire ing. Reliable predictive modelling approaches enable IC package development towards a first-time-right practice.
集成电路后端结构的虚拟设计与鉴定
对于集成电路(IC)晶圆后端开发,工艺开发人员必须设计健壮的后端结构,以保证在晶圆工艺、封装、资格测试和使用寿命期间的功能和可靠性。图1显示了开发的设计(和重新设计)周期的简化图。随后,封装开发集成电路开发。随后,包开发完成。继承也有类似的循环。通过将可靠性模型与集成电路和封装组装的相互作用联系起来,例如集成电路/化合物分层,我们旨在将集成电路和封装原型集成起来,从而更快地开发可靠的集成电路封装。本文介绍了我们通过在集成电路加工、封装和测试过程中虚拟设计和鉴定集成电路后端结构来接近热机械集成电路可靠性的部分研究。通过结合实验和数值结果,了解了目标失效模式和机制以及它们之间的相互作用。发现分层是钝化开裂和金属移位的关键触发因素。更重要的是,集成电路后端互连金属的布局对晶圆探测和布线后观察到的键合垫下导线分层有重要影响。可靠的预测建模方法使IC封装开发朝着第一次正确的方向发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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