Performance Estimation of Amorphouss-IGZO Based Thin Film Transistor

Abstract

Among the high field mobility materials, amorphous-InGaZnO (α-IGZO) is very prominent for their application as a channel material in Thin Film Transistors (TFTs). Electrical parameters for α-IGZO TFT are retrieved from the simulation results and the extraction of the switching parameters as threshold voltage, field effect mobility, subthreshold slope, and current ratio (ION/IOFF) have been reported in this paper. The results display large field effect mobility (μFE) 12.27 to 13.3 cm2/Vs ranging threshold voltage (Vth) 1.03 to 1.27 V, Subthreshold Swing (SS) 23.82 to 21.78 mV/decade and significant ON-OFF current ratio (ION/IOFF) 3.8 × 104 to 1.7×105. The reported characteristics from the simulation results demonstrated superior electrical parameters due to α-IGZO channel and shows that it can provide rapid switching, better resolution in flat-panel, and OLED displays.