A study of the states kinetics in NBTI degradation by two-stage NBTI model implementation

Abstract

This paper presents a simulation framework for reliability analysis of PMOS devices in the TCAD Sentaurus environment. The degradation of parameter is based on the numerical solution for the two-stage NBTI model mechanism. We demonstrate and analyze the voltage degradation, Vth of a high-k HfO2 dielectric pMOSFET structure with effective oxide thickness (EOT) of 1.092 nm. After 1000s of stress, the threshold voltage shift of higher stress bias shows higher degradation (~0.07V) compared to the lower stress bias (~0.008V).