A BIST structure for the evaluation of the MOSFET gate dielectric interface state density in post-processed CMOS chips

Abstract

A highly accurate built-in-self-test (BIST) structure is presented which reveals the gate dielectric interface state density of the MOS transistors of CMOS chips. A specific measurement setup or equipment is not required. The interface state density is directly A/D converted. The structure can be easily integrated into any chip with a standard digital interface.