{"title":"An Aptamer-based Electrochemical-Sensing Implant for Continuous Therapeutic- Drug Monitoring in vivo","authors":"Jun-Chau Chien, P. Mage, H. Soh, A. Arbabian","doi":"10.23919/VLSIC.2019.8777991","DOIUrl":null,"url":null,"abstract":"This work presents the first fully wireless implant system capable of continuous monitoring of therapeutic drugs in vivo. Electrochemical readout using square-wave voltammetry (SWV) is employed to measure the changes in the drug concentration using redox-labeled structure-switching aptamers. Ultrasound (US) powering and data transmission are employed in the implant for miniaturization, large tissue depth, and high available power. We demonstrate continuous and real-time detection in the human whole blood. Implemented in 65-nm CMOS, the entire implant system operates at 6.64 mW, and measures 140mm3 and 0.24g.","PeriodicalId":6707,"journal":{"name":"2019 Symposium on VLSI Circuits","volume":"21 1","pages":"C312-C313"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2019.8777991","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
This work presents the first fully wireless implant system capable of continuous monitoring of therapeutic drugs in vivo. Electrochemical readout using square-wave voltammetry (SWV) is employed to measure the changes in the drug concentration using redox-labeled structure-switching aptamers. Ultrasound (US) powering and data transmission are employed in the implant for miniaturization, large tissue depth, and high available power. We demonstrate continuous and real-time detection in the human whole blood. Implemented in 65-nm CMOS, the entire implant system operates at 6.64 mW, and measures 140mm3 and 0.24g.