А New Method of Obtaining Transparent Conducting Films of Indium (III) Oxide and Indium-Tin Oxide

IF 0.5 Q4 CHEMISTRY, MULTIDISCIPLINARY
N. Fadeeva, S. Saikova, E. Pikurova, A. Voronin, Y. Fadeev, A. Samoilo, I. A. Tambasov
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引用次数: 0

Abstract

In the work, sedimentation-stable sols of indium (III) and tin (IV) hydroxides were obtained by the Anion Resin Exchange Precipitation, which consists of the exchange reaction between the OH ions of the anion exchange resin and the anions of metal-containing solutions. The synthesized hydrosols were used to obtain conducting films of indium (III) In2O3 oxide and indium oxide doped with Tin In2O3: Sn, with a surface resistance of 4 kOhm/sq, thicknesses of 200–500 nm and a transparency of more than 85 %. The modes of applying precursors to glass substrates by the modified spray method and centrifugation method are selected. Films were studied using XRD, SEM, optical microscopy and spectrophotometry
А获得氧化铟(III)和氧化铟锡透明导电膜的新方法
本文采用阴离子树脂交换沉淀法,通过阴离子交换树脂中的OH离子与含金属溶液中的阴离子的交换反应,获得了沉淀稳定的铟(III)和锡(IV)氢氧化物溶胶。将合成的水溶胶用于制备氧化铟(III) In2O3和氧化铟掺杂Tin In2O3: Sn的导电膜,其表面电阻为4 kOhm/sq,厚度为200 ~ 500 nm,透明度大于85%。选择了采用改进的喷雾法和离心法将前驱体涂在玻璃基板上的方式。采用XRD、SEM、光学显微镜和分光光度法对薄膜进行了研究
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CiteScore
1.10
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0.00%
发文量
13
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