A New Graphene Nanoribbon based Resonant Tunneling Diodes using BN Quantum Well

Abstract

Negative Differential Resistance (NDR) is a well-known phenomenon in I-V characteristic of some electron devices such as Resonant Tunneling Diodes (RTDs), Esaki diode and resonant tunneling transistors. In this article a Double Barrier Quantum Well structures (DBQW) resonant tunneling diode has been proposed based on graphene nanoribbon and hexagonal-Boron Nitride. Three different channel RTD structures constructed from ZGNRs are proposed. In these structures, highest peak current of 2.1 µA, and lowest valley current 100nA is achieved. The transport properties of DBQW are explored by Non-Equilibrium Green's-Function (NEGF) formalism.