Thermionic Emission Induced Current-Voltage behaviour of GdMnO3/Al:ZnO/STO and GdMnO3/ZnO/STO Thin Film Heterostructures

Advanced Materials Letters Pub Date : 2023-07-01 DOI:10.5185/amlett.2023.031730

Pankaj Solanki, Mayur Vala, Sandip V. Bhatt, D. Dhruv, B. Kataria

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Abstract

We report the results of studies on the rectifying behaviour and tunnelling conduction in GdMnO3/ZnO/STO and GdMnO3/Al:ZnO/STO thin film heterostructures comprising of p-n junctions fabricated using the Pulsed Laser Deposition (PLD) technique. A structural study using grazing angle mode XRD depicts polycrystalline growth and confirms the phase purity. The AFM micrographs reveals the different grain growth and grain sizes of the prepared thin film heterostructures. Room temperature Raman spectra shows the presence of various vibrational modes in both the thin film heterostructures, the transport studies using I–V measurements at room temperature is explained using various models. The temperature dependent transport studies using I-V measurements at various temperatures reveal the rectifying behaviour and the difference in the I-V behaviour at various temperature can be understood on the basis of interface effect at the junction, which has been attributed to the presence of the various conduction phenomena through the junctions and the change in barrier height with the temperature for both presently studied thin film heterostructures.

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GdMnO3/Al:ZnO/STO和GdMnO3/ZnO/STO薄膜异质结构的热离子发射诱导电流-电压行为

本文报道了用脉冲激光沉积(PLD)技术制备的GdMnO3/ZnO/STO和GdMnO3/Al:ZnO/STO由p-n结组成的薄膜异质结构的整流行为和隧道传导的研究结果。利用掠掠角模式XRD进行了结构研究，描绘了多晶生长过程，并证实了相纯度。AFM显微图显示了制备的薄膜异质结构的晶粒生长和晶粒尺寸的不同。室温拉曼光谱显示了两种薄膜异质结构中存在不同的振动模式，用不同的模型解释了室温下使用I-V测量的输运研究。利用不同温度下的I-V测量进行的温度相关输运研究表明，在不同温度下的整流行为和I-V行为的差异可以根据结处的界面效应来理解，这归因于目前研究的两种薄膜异质结构中通过结存在的各种传导现象和势垒高度随温度的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advanced Materials Letters

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