Transmission electron microscopy investigation of SnO2 thin films for sensor devices

A.M Serventi , D.G Rickerby , M.C Horrillo , R.G Saint-Jacques , J Gutiérrez
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引用次数: 12

Abstract

Tin oxide thin films, deposited on alumina or silicon, are commonly employed as sensors of pollutant gases in the atmosphere. The response of these materials in gas sensing applications depends on the microstructural and morphological characteristics of the film, which are dependent on the specific production process and deposition conditions. Sensor sensitivity and selectivity can be improved by doping the oxide layer with small quantities of Pt. Tin oxide films were deposited on polycrystalline alumina substrates by reactive r.f. magnetron sputtering at different values of the substrate temperature during the process. Transmission electron microscopy was employed to investigate the microstructure of the samples, before and after Pt doping. The TEM results are discussed in relation to the behavior of the films in sensing applications.

传感器用SnO2薄膜的透射电镜研究
沉积在氧化铝或硅上的氧化锡薄膜通常用作大气中污染气体的传感器。这些材料在气敏应用中的响应取决于薄膜的微观结构和形态特征,而这些特征又取决于特定的生产工艺和沉积条件。通过在氧化层中掺杂少量的铂,可以提高传感器的灵敏度和选择性。在不同的衬底温度下,通过反应磁控溅射在多晶氧化铝衬底上沉积了氧化锡薄膜。采用透射电镜观察了Pt掺杂前后样品的微观结构。讨论了TEM结果与薄膜在传感应用中的行为的关系。
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