Carbon nanotubes gas sensors: current status and future prospects

C. Cantalini, L. Valentini, J. Kenny, L. Lozzi, S. Santucci
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引用次数: 1

Abstract

CNT thin film sensors have been prepared by PECVD techniques on Si/Si/sub 3/N/sub 4/ micromachined substrates. The role of the preparation conditions on the intrinsic electrical properties of the CNTs (i.e. metallic or semiconductor nature) the role of the structural defects on the CNT gas response (i.e. sensitivity, selectivity and stability) the interaction mechanisms of oxidizing and reducing molecules with the CNT surface (i.e physisorption or chemisorption), are analysed and discussed by means of experimental measurements (microstructural and electrical characterizations) and theoretical simulations (density functional calculations). CNT films demonstrated their fitness for oxidizing gases monitoring (NO/sub 2/ and O/sub 3/), had good selectivity when water vapor and reducing gases are the interfering species, and good stability. Surface modifications and hybrid CNT structures are presented as possible routes to improve gas response.
碳纳米管气体传感器:现状与展望
利用PECVD技术在Si/Si/sub - 3/N/sub - 4/微加工基底上制备了碳纳米管薄膜传感器。制备条件对碳纳米管固有电学性质(即金属或半导体性质)的作用;结构缺陷对碳纳米管气体响应(即灵敏度、选择性和稳定性)的作用;氧化和还原分子与碳纳米管表面的相互作用机制(即物理吸附或化学吸附);通过实验测量(微观结构和电学表征)和理论模拟(密度泛函计算)来分析和讨论。碳纳米管薄膜适合于氧化性气体(NO/sub 2/和O/sub 3/)的监测,对水蒸气和还原性气体的干扰具有良好的选择性和稳定性。表面改性和杂化碳纳米管结构被认为是改善气体响应的可能途径。
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