A. Boulouz, A. Giani, B. Sorli, L. Koutti, A. Massaq, F. Pascal-Delannoy
{"title":"Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films","authors":"A. Boulouz, A. Giani, B. Sorli, L. Koutti, A. Massaq, F. Pascal-Delannoy","doi":"10.1155/2014/430410","DOIUrl":null,"url":null,"abstract":"The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. \nFabrication and characterization of Bi/Sb/Te (BST) semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T)) at room temperature for Bi2Te3, and (Bi1−xSbx)2Te3 with x = 0.77 are found to be −220 µV/K and","PeriodicalId":17611,"journal":{"name":"Journal: Materials","volume":"35 1","pages":"1-8"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal: Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2014/430410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published.
Fabrication and characterization of Bi/Sb/Te (BST) semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T)) at room temperature for Bi2Te3, and (Bi1−xSbx)2Te3 with x = 0.77 are found to be −220 µV/K and