Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

A. Boulouz, A. Giani, B. Sorli, L. Koutti, A. Massaq, F. Pascal-Delannoy
{"title":"Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films","authors":"A. Boulouz, A. Giani, B. Sorli, L. Koutti, A. Massaq, F. Pascal-Delannoy","doi":"10.1155/2014/430410","DOIUrl":null,"url":null,"abstract":"The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. \nFabrication and characterization of Bi/Sb/Te (BST) semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T)) at room temperature for Bi2Te3, and (Bi1−xSbx)2Te3 with x = 0.77 are found to be −220 µV/K and","PeriodicalId":17611,"journal":{"name":"Journal: Materials","volume":"35 1","pages":"1-8"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal: Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2014/430410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST) semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T)) at room temperature for Bi2Te3, and (Bi1−xSbx)2Te3 with x = 0.77 are found to be −220 µV/K and
基于精细碲化铋合金薄膜的热电传感器及冷却装置的制备
这项工作的主要动机是开发和实现智能冷却和传感器设备的基础上精心设计和表征的半导体热电薄膜材料。首次公开了该传感器的详细设计和主要结果。成功地研究了Bi/Sb/Te (BST)半导体薄膜的制备和表征。在室温下,Bi2Te3和(Bi1−xSbx)2Te3 (x = 0.77)的塞贝克系数(α(T))的最佳值为- 220µV/K和
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