28nm FD-SOI technology and design platform for sub-10pJ/cycle and SER-immune 32bits processors

F. Abouzeid, S. Clerc, C. Bottoni, Benjamin Coeffic, J. Daveau, D. Croain, G. Gasiot, Dimitri Soussan, P. Roche
{"title":"28nm FD-SOI technology and design platform for sub-10pJ/cycle and SER-immune 32bits processors","authors":"F. Abouzeid, S. Clerc, C. Bottoni, Benjamin Coeffic, J. Daveau, D. Croain, G. Gasiot, Dimitri Soussan, P. Roche","doi":"10.1109/ESSCIRC.2015.7313840","DOIUrl":null,"url":null,"abstract":"This paper presents the technology and design optimization performed in 28nm FD-SOI to reach ultra-low energy and/or soft-error tolerance on ARM® Cortex®-M4 32bits processors. A 8.9pJ per cycle efficiency was measured while performing at 0.5V/45MHz, and a soft-error immunity was measured under alpha and neutron radiation while performing at 1.0V/730MHz. These results were achieved by the design of specific standard cells, macros and clock tree architectures, the technology intrinsic performances, and an adapted CAD flow.","PeriodicalId":11845,"journal":{"name":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","volume":"18 1","pages":"108-111"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2015.7313840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

This paper presents the technology and design optimization performed in 28nm FD-SOI to reach ultra-low energy and/or soft-error tolerance on ARM® Cortex®-M4 32bits processors. A 8.9pJ per cycle efficiency was measured while performing at 0.5V/45MHz, and a soft-error immunity was measured under alpha and neutron radiation while performing at 1.0V/730MHz. These results were achieved by the design of specific standard cells, macros and clock tree architectures, the technology intrinsic performances, and an adapted CAD flow.
28nm FD-SOI技术和设计平台,用于低于10pj /cycle和ser免疫32位处理器
本文介绍了在28nm FD-SOI上进行的技术和设计优化,以达到ARM®Cortex®-M4 32位处理器的超低能耗和/或软误差容忍。在0.5V/45MHz工作时,测量到每周期8.9pJ的效率;在1.0V/730MHz工作时,测量到在α和中子辐射下的软误差抗免疫力。这些结果是通过设计特定的标准单元、宏和时钟树架构、技术的内在性能和适应的CAD流程来实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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