A Novel Violet and Blue Enhanced SINP Silicon Photovoltaic Device

2009 Symposium on Photonics and Optoelectronics Pub Date : 2009-09-01 DOI:10.1109/SOPO.2009.5230108

Bo He, Q. Zhong, Xu Jing, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin

引用次数: 2

Abstract

A novel ITO/SiO2/np Silicon SINP violet and blue enhanced photovoltaic device has been fabricated by thermal diffusion of phosphorus for shallow junction to enhance the spectral responsivity within the wavelength range of 400-600nm, low temperature thermally grown an ultrathin silicon dioxide and RF sputtering ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The current-voltage (I-V) characteristics, spectral response and responsivity of high quantum efficiency of violet SINP photovoltaic device and deep junction SINP photovoltaic device were calculated and analyzed in detail. Keywords— ITO; SINP photovoltaic device; current-voltage(I-V) characteristics; spectral response; responsivity

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一种新型紫蓝增强型SINP硅光电器件

采用磷的热扩散法制备了一种新型ITO/SiO2/np硅SINP紫蓝色增强光伏器件，该器件用于浅结，在400-600nm波长范围内提高了光谱响应性，低温热生长超薄二氧化硅和射频溅射ITO增透涂层，以减少反射光，提高灵敏度。对紫色SINP光伏器件和深结SINP光伏器件的高量子效率的电流-电压特性、光谱响应和响应率进行了详细计算和分析。关键词-伊藤;SINP光伏装置;电流电压(电流-电压)特征;光谱响应;反应性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 Symposium on Photonics and Optoelectronics

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