Effect of insulator layer thickness on electrical properties of Al/BiFeO3/ZrO2/p-Si for nonvolatile memory applications

IF 1.3 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Ferroelectrics Letters Section Pub Date : 2020-03-26 DOI:10.1080/07315171.2020.1810984

Ashutosh Kumar Singh, Chandravilash Rai, S. Singh

引用次数: 0

Abstract

Abstract BiFeO3 (BFO) and ZrO2 have been deposited on p-type (100) silicon substrate by sol-gel process and rf sputtering method, respectively. Metal-ferroelectric-insulator-semiconductor capacitor has been fabricated with 100 nm BFO and 10 nm ZrO2 shows maximum memory window of 1.54 V as compared to other fabricated capacitors with 5 and 15 nm insulating layer thickness. Improvement in current density has been also observed in different thickness of buffer layer of MFIS capacitors. The improved current density of order of 10-7 A/cm2 has been observed in MF(100nm)I(10nm)S structure. It has been also observed in MF(100nm)I(10nm)S structure that no charge value degrades up to 1011 iteration cycles.

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绝缘层厚度对Al/BiFeO3/ZrO2/p-Si非易失性存储器电性能的影响

摘要:采用溶胶-凝胶法和射频溅射法分别在p型(100)硅衬底上沉积了BiFeO3 (BFO)和ZrO2。用100 nm的BFO和10 nm的ZrO2制备了金属-铁电-绝缘体-半导体电容器，与其他5和15 nm的绝缘层厚度制备的电容器相比，其最大存储窗口为1.54 V。在不同的缓冲层厚度下，电流密度也有所提高。在MF(100nm)I(10nm)S结构中，电流密度提高了10-7 A/cm2。在MF(100nm)I(10nm)S结构中也观察到，在1011个迭代周期内没有电荷值退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Ferroelectrics Letters Section 物理-物理：凝聚态物理

CiteScore

1.10

自引率

0.00%

发文量

审稿时长

4.8 months

期刊介绍： Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals. Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.