CdTe vapor phase condensates on (100) Si and glass for solar cells

L. Nykyrui, Y. Saliy, R. Yavorskyi, Ya. Yavorskyi, V. Schenderovsky, G. Wisz, Sz. Górny
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引用次数: 7

Abstract

The structural and chemical properties of Cadmium Telluride (CdTe) thin films received at different technology conditions were investigated. Thin films of CdTe were grown on Silicon (100) and glass substrates using by vapor phase condensation method. Morphological properties of the thin film surface and the cross section were investigated by scanning electron and atomic force microscopies. A cross section study has shown the columnar-type of grown of the CdTe thin films. The chemical composition of the obtained films was investigated by SEM using the method of Energy-dispersive X-ray spectroscopy (EDX). The thickness of samples was analysis using the profilometer Bruker Dektak XT.
CdTe气相在(100)Si和用于太阳能电池的玻璃上冷凝
研究了在不同工艺条件下制备的碲化镉薄膜的结构和化学性质。采用气相冷凝法在硅(100)和玻璃衬底上生长CdTe薄膜。利用扫描电子显微镜和原子力显微镜研究了薄膜表面和截面的形态特征。横截面研究表明,CdTe薄膜呈柱状生长。利用能量色散x射线能谱(EDX)方法对所制备薄膜的化学成分进行了扫描电镜研究。使用Bruker Dektak XT剖面仪分析样品的厚度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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