ROM of Superharmonic Resonance of Fourth Order of Electrostatically Actuated Clamped MEMS Circular Plates: Voltage Response

D. Caruntu, Julio Beatriz
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Abstract

This paper investigates the voltage-amplitude response of superharmonic resonance of fourth order of electrostatically actuated clamped MEMS circular plates. The system consists of flexible MEMS circular plate parallel to a ground plate. Hard excitations (voltage large enough) and AC voltage of frequency near one eight of the natural frequency of the MEMS plate resonator lead it into a superharmonic resonance. Hard excitations produce actuation forces large enough to produce resonance away from the primary resonance zone. There is no DC component in the voltage applied. The partial differential equation of motion describing the behavior of the system is solved using two modes of vibration reduced order model (ROM). This model is solved through a continuation and bifurcation analysis using the software package AUTO 07P which produces the voltage-amplitude response (bifurcation diagram of the system, and a numerical integration of the system of differential equations using Matlab that produces time responses of the system. Numerical simulations are conducted for a typical MEMS silicon circular plate resonator. For this resonator the quantum dynamics effects such as Casimir effect or Van der Waals effect are negligible. Both methods show agreement for the entire range of voltage values and amplitudes. The response consists of an increase of the amplitude with the increase of voltage, except around the value of 4 of the dimensionless voltage where the resonance shows two saddle-node bifurcations and a peak amplitude about ten times larger than the amplitudes before and after the dimensionless voltage of 4. The softening effect is present. The pull-in voltage is reached at large values of the dimensionless voltage, namely about 14. The effects of damping and frequency on the voltage response are reported. As the damping increases, the peak amplitude decreases for the resonance. However, the pull-in voltage is not affected. As the frequency increases, the resonance zone is shifted to lower voltage values and lower peak amplitudes. However, the pull-in voltage and the behavior for large voltage values are not affected.
四阶静电驱动箝位MEMS圆片的超谐波谐振:电压响应
本文研究了静电驱动箝位MEMS圆片四阶超谐波谐振的电压幅值响应。该系统由与接地板平行的柔性MEMS圆板组成。强激励(电压足够大)和频率接近MEMS板谐振器固有频率八分之一的交流电压导致其产生超谐波谐振。硬激励产生足够大的致动力,在主共振区之外产生共振。施加的电压中没有直流分量。采用两种降阶振动模型(ROM)求解了描述系统行为的运动偏微分方程。利用AUTO 07P软件对系统进行延拓和分岔分析,得到系统的电压幅值响应分岔图,并利用Matlab对系统微分方程进行数值积分,得到系统的时间响应。对典型的MEMS硅圆板谐振器进行了数值模拟。对于这种谐振腔,卡西米尔效应或范德华效应等量子动力学效应可以忽略不计。两种方法在整个电压值和幅值范围内显示一致。振幅随电压的增加而增加,但在无量纲电压4附近,谐振出现两个鞍节点分岔,峰值振幅约为无量纲电压4前后振幅的10倍。存在软化效果。在无量纲电压的较大值,即约14时达到拉入电压。研究了阻尼和频率对电压响应的影响。随着阻尼的增加,共振的峰值幅度减小。但是,插入电压不受影响。随着频率的增加,谐振区移至较低的电压值和较低的峰值幅值。然而,拉入电压和大电压值的行为不受影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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