W CMP evaluation for 0.25 /spl mu/m logic device

Abstract

The purpose of this study is to report polishing characteristics of W CMP with combination sets of slurry and pad in 0.25 um logic technology. W etch back process is compared with W CMP process in view of electrical performance in the 0.25 /spl mu/m logic device. The proper selection of consumables is important to the successful application of W CMP. The W CMP process should be carefully controlled to be implemented in the back-end process of sub-quarter micron logic device.