Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon

2020 Conference on Lasers and Electro-Optics (CLEO) Pub Date : 2020-05-01 DOI:10.1364/cleo_at.2020.jm2e.1

Yiyin Zhou, Huong Tran, W. Du, Jifeng Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, Yong-Hang Zhang, Baohua Li, M. Mortazavi, Shui-Qing Yu

引用次数: 0

Abstract

We demonstrated optically pumped GeSn lasers operating at 270 K and 3.5 μm, and photodetectors with spectral response cutoff at 3.65 μm and 300 K. Latest progress on electrically injected lasers will also be reported.

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硅单片集成中红外GeSn/SiGeSn激光器和光电探测器

我们展示了工作在270 K和3.5 μm的光泵浦GeSn激光器，以及光谱响应截止在3.65 μm和300 K的光电探测器。电注入激光器的最新进展也将被报道。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 Conference on Lasers and Electro-Optics (CLEO)

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