W-band metamorphic HEMT with 267 mW output power

IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI:10.1109/MWSYM.2005.1516748

Katherine J. Herrick, Kenneth W. Brown, Frederick A. Rose, Colin S. Whelan, J. Kotce, R. Jeffrey, Laroche, Yiwen Zhang, Raytheon

引用次数: 17

Abstract

This paper reports the highest W-band power output of metamorphic HEMT (MHEMT) technology to date. 267 mW single stage performances at 90 GHz are achieved on a 0.15 micron GaAs-based production line with improved manufacturability over InP HEMT. The single stage circuits presented here are building blocks for future MHEMT power amplifier development.

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输出功率267 mW的w波段变质HEMT

本文报道了迄今为止变质HEMT (MHEMT)技术的最高w波段功率输出。在0.15微米的gaas生产线上实现了90 GHz下267mw的单级性能，其可制造性优于InP HEMT。这里介绍的单级电路是未来MHEMT功率放大器发展的基石。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE MTT-S International Microwave Symposium Digest, 2005.

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