Polycrystalline silicon deposited on glass by subatmospheric-pressure chemical vapour deposition at a high rate

P. Münster, M. Sarret, T. Mohammed‐Brahim, N. Coulon, J. Mevellec
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引用次数: 7

Abstract

Abstract Amorphous silicon films have been deposited on glass by subatmosphericpressure chemical vapour deposition and then crystallized by solid-phase crystallization. The structural and electrical properties of these polycrystalline silicon films are presented in this work. Good crystalline quality at a deposition pressure of about 400 mbar has been achieved as well as values of the mobilitylifetime product above 10−5cm2V−1 and an ambipolar diffusion length near 200 nm. Depending upon the deposition temperature and pressure, growth rates of up to 20 μm h−1 can be obtained. In-situ doping with arsenic and boron has been studied using Hall effect measurements. High mobilities around 45cm2V−1s−1 have been attained for highly n-type doped samples and mobilities in the range from 20 to 30 cm2 V−1 s−1 for boron-doped samples.
用亚大气压化学气相沉积法在玻璃上快速沉积多晶硅
摘要采用亚常压化学气相沉积法在玻璃表面沉积非晶硅薄膜,然后采用固相结晶法进行结晶。本文介绍了多晶硅薄膜的结构和电学性能。在约400毫巴的沉积压力下获得了良好的结晶质量,迁移寿命产品的值高于10−5cm2V−1,双极性扩散长度接近200 nm。根据沉积温度和压力的不同,可以获得高达20 μm h−1的生长速率。用霍尔效应测量方法研究了砷和硼的原位掺杂。高n型掺杂样品的迁移率在45cm2V−1s−1左右,硼掺杂样品的迁移率在20 ~ 30 cm2V−1s−1之间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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