Toward negative capacitance electronics

Abstract

Progress in electronics is limited by power dissipation constraints. Ferroelectric materials with a negative capacitance could help to overcome these limits. Especially, HfO2 and ZrO2 based ferroelectrics are promising for negative capacitance electronics due to their compatibility with modern transistor manufacturing processes. Recently, first negative capacitance transistors have been demonstrated. However, further investigations on the microscopic origin of negative capacitance in HfO2- and ZrO2-based ferroelectrics are needed. Lastly, opportunities for negative capacitance beyond transistors are discussed.