{"title":"A CMOS bandgap reference with high PSRR and improved temperature stability for system-on-chip applications","authors":"Abhisek Dey, T. K. Bhattacharyya","doi":"10.1109/EDSSC.2011.6117640","DOIUrl":null,"url":null,"abstract":"A high precision temperature compensated CMOS bandgap reference is implemented in UMC 0.18µm RF/CMOS process. The proposed circuit employs current-mode architecture that removes the supply as well as reference voltage limitations. Using only first order compensation the new architecture can generate an output reference voltage of 600mV with a variation of 400µV over a wide temperature range from +20°C to +100°C which corresponds to a temperature coefficient of 5.5ppm/°C. The output reference voltage exhibits a variation of 2mV for supply voltage ranging from 1.6V to 2.0V. Simulation result shows that the power supply rejection ratio of the proposed circuit is 79dB from DC up to 1kHz of frequency. The presented bandgap reference occupies only 0.09 mm2 layout area.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A high precision temperature compensated CMOS bandgap reference is implemented in UMC 0.18µm RF/CMOS process. The proposed circuit employs current-mode architecture that removes the supply as well as reference voltage limitations. Using only first order compensation the new architecture can generate an output reference voltage of 600mV with a variation of 400µV over a wide temperature range from +20°C to +100°C which corresponds to a temperature coefficient of 5.5ppm/°C. The output reference voltage exhibits a variation of 2mV for supply voltage ranging from 1.6V to 2.0V. Simulation result shows that the power supply rejection ratio of the proposed circuit is 79dB from DC up to 1kHz of frequency. The presented bandgap reference occupies only 0.09 mm2 layout area.