Extremely Compact Integrate-and-Fire STT-MRAM Neuron: A Pathway toward All-Spin Artificial Deep Neural Network

Ming-Hung Wu, Ming-Chun Hong, Chih-Cheng Chang, P. Sahu, Jeng-Hua Wei, Heng-Yuan Lee, Shyh-Shyuan Shcu, T. Hou
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引用次数: 13

Abstract

This work reports the complete framework from device to architecture for deep learning acceleration in an all-spin artificial neural network (ANN) built by highly manufacturable STT-MRAM technology. The most compact analog integrate-and-fire neuron reported to date is developed based on the back-hopping oscillation in magnetic tunnel junctions. This novel device is unique because it performs numerous essential neural functions simultaneously, including current integration, voltage spike generation, state reset, and 4-bit precision. The device itself is also a stochastic binary synapse, and thus eases the implementation of the compact all-spin ANN with high accuracy for online training.
极紧凑的STT-MRAM神经元:通往全自旋人工深度神经网络的途径
基于磁隧道结的回跳振荡,开发了迄今为止报道的最紧凑的模拟积分-放电神经元。这种新颖的设备是独一无二的,因为它同时执行许多基本的神经功能,包括电流集成、电压尖峰产生、状态复位和4位精度。该装置本身也是一个随机二元突触,从而简化了紧凑的全自旋神经网络的实现,具有高精度的在线训练。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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