Kai Wang, Zhigang Zhang, Ping Wang, Ling-zhi Xu, Shenzhou Lu, A. Tan, Zhenjie Qiao, K. Huang, Qimeng Wang, Duo Shan, Fan Zhang, Chang Fu, Zhaoyuan Zhao, Qin Sun
{"title":"Study of Influence of STI Profile on Harp Gap-Filling Performance","authors":"Kai Wang, Zhigang Zhang, Ping Wang, Ling-zhi Xu, Shenzhou Lu, A. Tan, Zhenjie Qiao, K. Huang, Qimeng Wang, Duo Shan, Fan Zhang, Chang Fu, Zhaoyuan Zhao, Qin Sun","doi":"10.1109/CSTIC49141.2020.9282412","DOIUrl":null,"url":null,"abstract":"HARP gap-filling performance is related with trench profile. In this paper, the influence of STI morphology on HARP gap-filling performance is studied. Both the slight undercut between top SiN and active area (AA), and top SiN CD, don't show impact on HARP gap-filling performance for the observed range. The side wall angle is key factor. For side wall angle of 89°, we have proved from both theory and experiment, that even 0.5° reduction of side wall angle can greatly reduce the STI void density.","PeriodicalId":6848,"journal":{"name":"2020 China Semiconductor Technology International Conference (CSTIC)","volume":"87 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC49141.2020.9282412","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
HARP gap-filling performance is related with trench profile. In this paper, the influence of STI morphology on HARP gap-filling performance is studied. Both the slight undercut between top SiN and active area (AA), and top SiN CD, don't show impact on HARP gap-filling performance for the observed range. The side wall angle is key factor. For side wall angle of 89°, we have proved from both theory and experiment, that even 0.5° reduction of side wall angle can greatly reduce the STI void density.