Correct determination of electron concentration in n–GaSb from Hall data

IF 0.2 Q4 FORESTRY
Y. Parkhomenko, A. Belov, E. V. Molodtsova, R. Kozlov, S. S. Kormilitsina, E. Zhuravlev
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引用次数: 0

Abstract

The calculation of conductivity electron concentrations in n-GaSb at T = 295 K and T = 77 K have been made. The concentration of “heavy” electrons in the L-valley of conduction band at Т = 295 K has been shown to exceed “light” electron one in the Γ-valley. On the contrary, at T = 77 K the conductivity electrons are gathered in the Γ-valley.The results of Hall measurements made on tellurium-doped samples of n-GaSb obtained by the Czochralski method have been represented. It has been shown that upon analysing Hall data at Т = 295 K, it is necessary to take into account the presence of two types of electrons (“light” and “heavy”); their concentrations are not possible to be determined. Seeming increase in electron concentration upon transition from T = 295 K to 77 K really does not take place. The electron concentration at T = 77 K may be determined correctly from the Hall data.
根据霍尔数据正确测定n-GaSb中的电子浓度
计算了T = 295 K和T = 77 K时n-GaSb的电导率电子浓度。在Т = 295 K处,导带l -谷中的“重”电子的浓度已被证明超过Γ-valley中的“轻”电子的浓度。相反,在T = 77 K时,导电电子聚集在Γ-valley中。本文介绍了用zzochralski法对掺碲的n-GaSb样品进行霍尔测量的结果。已经证明,在分析Т = 295 K的霍尔数据时,有必要考虑到两种电子(“轻”和“重”)的存在;它们的浓度无法测定。从T = 295k跃迁到77k时,电子浓度表面上的增加实际上并没有发生。T = 77 K时的电子浓度可由霍尔数据正确测定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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