{"title":"Measurement of Laser Drilling Shift for Opaque Build-up Film by Infrared Microscope","authors":"Chung-Yu Ke, Liang-Pin Chen","doi":"10.1109/IMPACT56280.2022.9966681","DOIUrl":null,"url":null,"abstract":"With the development of smart phones, the developing direction of Application Chip (AP) is to be thinner and lighter. FOPOP (Fan-Out Package On Package) is the mainstream packaging mode to cope with the ever-increasing layout density [1] [2]. In the mobile phone market where a hundred schools of thought contend, to cope with mobile phone APs of different brands and performances, the structure of without memory stacking has gradually become the mainstream of the FOPOP structure. The FOPOP without memory stacking, in order to complete the memory stacking of different brands and the application of mobile phones at high frequencies, there are strict requirements on the material of the connection surface. Among them, Build-up Film, due to its low dielectric constant (Dk), low dielectric loss and low coefficient of thermal expansion (CTE) at high frequencies, can solve problems such as transmission loss and package warpage [3] [4]. In order to achieve memory stacking, we used the laser drilling technology on the Build-up Film to reveal the pattern that connected to the Memory, and fill the solder into the drill hole in advance, which is convenient for the end product to stack the Memory. The shift of the laser drilling will directly affect the difficulty of stacking the Memory, which will eventually lead to the opening of the circuit. Hence, the shift of the laser drilling is one of the necessary inspection items. However, Build-up Film is a non-traditional transparent film, by laser microscope, we cannot know the position of the pattern under the Build-up Film, and cannot measure the shift. The Infrared (IR) Microscope is generally used to detect backside and side wall cracks in silicon die. The purpose of detection is achieved through the characteristics of IR long wavelengths that easily penetrate silicon. Relatively, the red light laser microscope that most commonly used in the production line cannot penetrate the Build-up Film due to the short wavelength of red light. Hence, we use long-wavelength IR to penetrate the Build-up Film, and use a correction sheet to correct the length to ensure the accuracy of the length measurement. The measurement of laser drilling shift is achieved, to ensure the quality of laser drilling. Finally, we confirmed that the error between IR Microscope measurement result and cross-section & SEM is within 2.14μm, so IR Microscope is a feasible measurement tool for laser drilling shift of Build-up Film.","PeriodicalId":13517,"journal":{"name":"Impact","volume":"51 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Impact","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMPACT56280.2022.9966681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
With the development of smart phones, the developing direction of Application Chip (AP) is to be thinner and lighter. FOPOP (Fan-Out Package On Package) is the mainstream packaging mode to cope with the ever-increasing layout density [1] [2]. In the mobile phone market where a hundred schools of thought contend, to cope with mobile phone APs of different brands and performances, the structure of without memory stacking has gradually become the mainstream of the FOPOP structure. The FOPOP without memory stacking, in order to complete the memory stacking of different brands and the application of mobile phones at high frequencies, there are strict requirements on the material of the connection surface. Among them, Build-up Film, due to its low dielectric constant (Dk), low dielectric loss and low coefficient of thermal expansion (CTE) at high frequencies, can solve problems such as transmission loss and package warpage [3] [4]. In order to achieve memory stacking, we used the laser drilling technology on the Build-up Film to reveal the pattern that connected to the Memory, and fill the solder into the drill hole in advance, which is convenient for the end product to stack the Memory. The shift of the laser drilling will directly affect the difficulty of stacking the Memory, which will eventually lead to the opening of the circuit. Hence, the shift of the laser drilling is one of the necessary inspection items. However, Build-up Film is a non-traditional transparent film, by laser microscope, we cannot know the position of the pattern under the Build-up Film, and cannot measure the shift. The Infrared (IR) Microscope is generally used to detect backside and side wall cracks in silicon die. The purpose of detection is achieved through the characteristics of IR long wavelengths that easily penetrate silicon. Relatively, the red light laser microscope that most commonly used in the production line cannot penetrate the Build-up Film due to the short wavelength of red light. Hence, we use long-wavelength IR to penetrate the Build-up Film, and use a correction sheet to correct the length to ensure the accuracy of the length measurement. The measurement of laser drilling shift is achieved, to ensure the quality of laser drilling. Finally, we confirmed that the error between IR Microscope measurement result and cross-section & SEM is within 2.14μm, so IR Microscope is a feasible measurement tool for laser drilling shift of Build-up Film.
随着智能手机的发展,应用芯片(AP)的发展方向是更薄、更轻。FOPOP (Fan-Out Package On Package)是应对日益增长的布局密度[1]b[2]的主流封装模式。在百家争抢的手机市场,为了应对不同品牌、不同性能的手机ap,无内存堆叠的结构逐渐成为FOPOP结构的主流。没有内存堆叠的FOPOP,为了完成不同品牌的内存堆叠和手机在高频下的应用,对连接面的材质有严格的要求。其中,积聚膜由于其在高频下具有低介电常数(Dk)、低介电损耗和低热膨胀系数(CTE),可以解决传输损耗和封装翘曲[3][4]等问题。为了实现存储器的堆叠,我们在堆积膜上使用激光钻孔技术,将连接到存储器的图案显示出来,并提前将焊料填充到钻孔中,方便最终产品堆叠存储器。激光打孔的移位会直接影响Memory的堆叠难度,最终导致电路的打开。因此,激光打孔的位移是必要的检测项目之一。然而,堆积膜是一种非传统的透明薄膜,通过激光显微镜,我们无法知道图案在堆积膜下的位置,也无法测量位移。红外显微镜通常用于检测硅模具的背面和侧壁裂纹。探测的目的是通过红外长波容易穿透硅的特性来实现的。相对而言,生产线上最常用的红光激光显微镜由于红光波长短,无法穿透堆积膜。因此,我们使用长波长的IR来穿透堆积膜,并使用校正片来校正长度,以确保长度测量的准确性。实现了激光打孔位移的测量,保证了激光打孔质量。最后,我们证实了红外显微镜测量结果与横截面和扫描电镜的误差在2.14μm以内,因此红外显微镜是激光钻削堆积膜位移的一种可行的测量工具。