Prospects for epitaxial c-Er2O3 as a CMOS-compatible lasing material

2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science Pub Date : 2008-05-04 DOI:10.1109/CLEO.2008.4551651

C. P. Michael, O. Painter, H. Yuen, V. Sabnis, A. Jamora, S. Semans, P. Atanackovic

引用次数: 1

Abstract

The emission of high-Q c-Er₂O₃ resonators displays little inhomogeneous broadening, robust vacuum-Rabi splitting, and strong upconversion. Considering these effects and a rate-equation model, we analyze the prospects for optically pumped on-chip lasing using c-Er₂O₃.

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外延c-Er2O3作为cmos兼容激光材料的前景

高q c-Er2O3谐振腔的发射表现出较小的非均匀展宽、强劲的真空-拉比分裂和强的上转换。考虑到这些影响和速率方程模型，我们分析了使用c-Er2O3的光泵片上激光的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science

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