Effect of Implant Beam Current on Resistance of BF2 Implanted Polysilicon

Abstract

The effect of different injection beams (3ma, 5ma and 7ma) on the square resistance of polysilicon was studied by implanting BF2 with GSD200 (an energy of 30 Kev and dose of 2E15 under 1000°C, 30S rapid thermal annealing). The experimental results showed that the higher beam current would result in the lower resistance of polysilicon. The higher implant beam current will lead to more damage in polysilicon which will result in bigger poly grain size after thermal annealing, the bigger grain size will make more carriers in grain boundary and the resistance of polysilicon decreases accordingly. Key words: Polysilicon, Resistance, Implant, BF2, Beam current