Study the Effect of Different Silicon Substrate Resistivities on the Photoluminescence Results

Abstract

The silicon-based electroluminescent devices are most commonly used in recent years, especially in optical equipment. The physical properties of the photoluminescence are investigated experimentally in this paper. The silicon substrate resistivity is tested dependence of the photoluminescence of porous. The formation current density of p-type and highly doped p-type silicon are studied. It is found that using 40 mA/cm 2 as a formation current density produced a large number of contributing nano crystals. The applied low current caused a weak photoluminescence intensity, and the increasing of the formation current density led to increase the contributing Nano crystallizes. For the optimum case with smaller nanocrystallite sizes, the photoluminescence intensity decreased by the fast etching process, and the high current density produced a small number of nanocrystallite sizes and very weak photoluminescence. The higher resistivity doesn’t give a higher intensity and better results in photoluminescence of used porous silicon