Implementation of non-volatile 4×4 4T1D DRAM cell in 0.18μm technology

Abstract

This paper deals with the design and evolution of different 4×4 bit DRAM cells. Performances of different volatile 4×4 DRAM cells are compared. The comparison is done on the basis of power, area and delay. The 4×4 Non-Volatile (NVDRAM 4T1D) cell is proposed. The performance of the NVDRAM is then examined. The schematic entry was done using Mentor Graphics Design architect and simulations are done using Mentor Graphics Eldo. The simulation results obtained with TSMC 0.18μm process technology at 1.8V.