CRYSTALS GROWTH AND REFINEMENT OF THE Cu3SbSe3 CRYSTAL STRUCTURE

O.J. Chorba, M. Filep, A. Pogodin, T. Malakhovska, M. Sabov
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Abstract

The technology of thermoelectric converters, based on the Peltier and Seebeck effects, provides a reversible process of convert in thermal and electrical energy. This opens up prospects for the creation of both thermoelectric coolers and thermoelectric generators. The most widely studied class of thermoelectric materials are complex chalcogenides. In recent years, copper-containing chalcogenides have been actively researched as new highly effective and ecologically friendly thermoelectric materials. The Cu–Sb–Se ternary system are characterized by the existence of three phases CuSbSe2, Cu3SbSe3 and Cu3SbSe4. Among these compounds, the Cu3SbSe3 phase is characterized by the lowest thermal conductivity. The synthesis of the Cu3SbSe3 polycrystalline alloy was carried out using high purity elementally components. The synthesis was carried out in vacuumed quartz ampoules by a one-temperature, two-stage process. Taking into account the incongruent melting of Cu3SbSe3, the single crystal growth was carried out by the method of vertical zone crystallization from a solution-melt in vacuumed conical quartz ampoules. As a result, the grown single crystal was dark gray color with metallic luster, without defects with length ~ 40 mm and diameter 12 mm. Obtained single crystalline sample of Cu3SbSe3 was investigated by DTA method. The heating curve contains one endothermic effect at 530°С, which corresponds to the process of peritectic decomposition of Cu3SbSe3. The effect corresponding to the melting of all components in the quartz container is not fixed. However, it is clearly visible on the cooling curve at 712 °С. The exothermic effect of crystallization of Cu3SbSe3 (503 °С) is clear and sharp and is observed with supercooling ΔТ = 27 °С. To confirm the single crystallinity of grown Cu3SbSe3 sample, an XRD analysis of the natural surface was carried out. The diffraction pattern shows two clear and narrow diffraction peaks corresponding to the (200) and (400) planes at angles of 22.27° and 45.42°, respectively. The crystal structure of the obtained Cu3SbSe3 single crystal was investigated by XRD analysis using the Rietveld full-profile refinement method. Established that Cu3SbSe3 crystallize in orthorhombic crystal system, SGPnma with lattice parameters: a = 7.9668 Å, b = 10.65870 Å, c = 6.8207 Å, Z = 4.
Cu3SbSe3晶体结构的生长和细化
热电变换器技术基于珀尔帖效应和塞贝克效应,提供了一种可逆的热能和电能转换过程。这为热电冷却器和热电发电机的创造开辟了前景。研究最广泛的一类热电材料是复杂硫属化合物。近年来,含铜硫族化合物作为一种高效、环保的新型热电材料得到了积极的研究。Cu-Sb-Se三元体系的特点是存在CuSbSe2、Cu3SbSe3和Cu3SbSe4三个相。在这些化合物中,Cu3SbSe3相的导热系数最低。采用高纯元素组分合成了Cu3SbSe3多晶合金。该合成是在真空石英安瓿中通过一个温度,两个阶段的过程进行的。考虑到Cu3SbSe3的不均匀熔融,在真空锥形石英安瓿中采用溶液熔体垂直区结晶法进行了单晶生长。结果表明,生长的单晶呈深灰色,具有金属光泽,无缺陷,长~ 40 mm,直径12 mm。用DTA法对所得Cu3SbSe3单晶样品进行了研究。升温曲线在530°С处存在一个吸热效应,对应于Cu3SbSe3的包晶分解过程。石英容器内各组分熔化所对应的效果是不固定的。然而,它在712°С的冷却曲线上清晰可见。Cu3SbSe3(503°С)在过冷ΔТ = 27°С时发生了明显的放热结晶。为了证实生长的Cu3SbSe3样品的单晶性,对其自然表面进行了XRD分析。衍射图显示(200)面和(400)面分别以22.27°和45.42°夹角对应两个清晰窄的衍射峰。采用Rietveld全剖面细化法对所得Cu3SbSe3单晶的晶体结构进行了XRD分析。建立Cu3SbSe3在正交晶系中结晶,SGPnma晶格参数为:a = 7.9668 Å, b = 10.65870 Å, c = 6.8207 Å, Z = 4。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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