Preparation of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by reactive magnetron sputtering using metal target and their evaluations

Abstract

As sputtered ferroelectric and [001] oriented Bi/sub 4/Ti/sub 3/O/sub 12/ thin films were prepared on a Pt/Ti/SiO/sub 2//Si substrate at a comparatively low temperature around 330 /spl deg/C, by a reactive magnetron sputtering using Bi and Ti metal target. The chemical composition of deposited film is determined by the multi-element structure of target designed by a sputtering yield of Bi and Ti, which was changed by the gas ratio of the Ar/sup +/ and O/sub 2/ and the value of input rf-power. Dielectric constant was 100 at 1 kHz. The remanent polarization and the coercive field were 7uC/cm/sup 2/ and 51.2 kV/cm, respectively.