Computer simulation for ion sources optimization

Abstract

Computer simulation for ion sources optimization used for ion implantations is reported. Highly stripped ion source is designed to provide high current beams of multiply charged phosphorous and boron ions for high energy ion implantation. Maximum current transport for boron ions is obtained with the optimisation of geometries of the ion-optical system and experimental setup. The maximum attainable percentage of singly charged B ions was 65% and the total current transport was about 60%.