Effects of Silicon Wafer’s Resistivity on Passivation and Devices Performances of Solar Cell

Na Lin, Shihua Huang
{"title":"Effects of Silicon Wafer’s Resistivity on Passivation and Devices Performances of Solar Cell","authors":"Na Lin, Shihua Huang","doi":"10.54097/ije.v2i3.8737","DOIUrl":null,"url":null,"abstract":"In the manufacture of solar cells, the resistivity of silicon wafers has a crucial impact on their performance. This study investigated the effects of different resistivities on p-TOPCon solar cells. The results indicate that lower resistivity wafers have a higher implied open-circuit voltage (iVoc) value, but higher carrier mobility due to the low resistivity leads to an increase in saturation current density (J0). Conversely, solar cells made on higher resistivity silicon wafers have a lower carrier mobility, leading to slower electron-hole recombination and lower bulk recombination, resulting in the advantage of lower saturation current density and higher minority carrier lifetime. At the same time, simulation shows that as the resistivity increases, the Voc and efficiency increase. However, cost considerations need to be taken into account as higher resistivity silicon wafers are more expensive. Therefore, resistivity between 2 - 3 Ω·cm2 is considered the preferred substrate for solar cells as it offers a better balance between cost and achieving high cell efficiency.","PeriodicalId":14093,"journal":{"name":"International journal of energy science","volume":"211 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International journal of energy science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.54097/ije.v2i3.8737","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In the manufacture of solar cells, the resistivity of silicon wafers has a crucial impact on their performance. This study investigated the effects of different resistivities on p-TOPCon solar cells. The results indicate that lower resistivity wafers have a higher implied open-circuit voltage (iVoc) value, but higher carrier mobility due to the low resistivity leads to an increase in saturation current density (J0). Conversely, solar cells made on higher resistivity silicon wafers have a lower carrier mobility, leading to slower electron-hole recombination and lower bulk recombination, resulting in the advantage of lower saturation current density and higher minority carrier lifetime. At the same time, simulation shows that as the resistivity increases, the Voc and efficiency increase. However, cost considerations need to be taken into account as higher resistivity silicon wafers are more expensive. Therefore, resistivity between 2 - 3 Ω·cm2 is considered the preferred substrate for solar cells as it offers a better balance between cost and achieving high cell efficiency.
硅片电阻率对太阳电池钝化及器件性能的影响
在太阳能电池的制造中,硅片的电阻率对其性能有着至关重要的影响。研究了不同电阻率对p-TOPCon太阳能电池性能的影响。结果表明,低电阻率晶圆具有更高的隐含开路电压(iVoc)值,但由于低电阻率导致更高的载流子迁移率导致饱和电流密度(J0)增加。相反,在高电阻率硅片上制造的太阳能电池具有较低的载流子迁移率,导致更慢的电子-空穴复合和更低的体复合,从而具有较低的饱和电流密度和较高的少数载流子寿命的优势。同时,仿真结果表明,随着电阻率的增大,Voc和效率也随之增大。然而,由于电阻率更高的硅片更昂贵,因此需要考虑成本因素。因此,2 - 3 Ω·cm2之间的电阻率被认为是太阳能电池的首选衬底,因为它在成本和实现高电池效率之间提供了更好的平衡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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