Relationship between electric properties and surface flatness of (ZnO)x(InN)1−x films on ZnO templates

K. Matsushima, M. Shiratani, N. Itagaki
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Abstract

We have studied effects of deposition temperature on electrical properties of (ZnO)x(InN)1-x (ZION) films on ZnO templates. With increasing the deposition temperature from RT to 450°C, the electron mobility decreases from 93 cm2/Vs to 70 cm2/Vs and the carrier density increases from 1.8×1019 cm-3 to 3.4×1019 cm-3. Furthermore, we found a correlation between electrical properties and root mean square (RMS) roughness of the films. These results suggest the surface flatness is an important parameter to determine electrical properties of ZION films.
ZnO模板上(ZnO)x(InN)1−x薄膜的电学性能与表面平整度的关系
我们研究了沉积温度对ZnO模板上(ZnO)x(InN)1-x (ZION)薄膜电性能的影响。随着沉积温度从RT升高到450℃,电子迁移率从93 cm2/Vs降低到70 cm2/Vs,载流子密度从1.8×1019 cm-3增加到3.4×1019 cm-3。此外,我们发现电学性质与薄膜的均方根(RMS)粗糙度之间存在相关性。这些结果表明,表面平整度是决定锡安薄膜电性能的一个重要参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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