High-Power-Capable, Ultra-Wideband, 1-Bit, Reflectarray Unit Cells Using Polarization-Rotation Reflection Modes

Meng Gao, M. M. Honari, J. Booske, N. Behdad
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Abstract

Two ultra-wideband, reconfigurable reflective polarization-rotating (PR) elements are presented in this paper for high-power microwave applications. While one structure provides wider bandwidth, the other one is less challenging to fabricate and is likely more robust mechanically. The proposed structures use two dipole antennas connected to a switching circuit integrated with four, commercially-available, PIN diodes at the backside of a ground plane. Switching between different on-off combination states of the PIN diodes provides 0° or 180°phase shifts yielding a tunable, 1-bit, phase-shifting unit cell. Full-wave electromagnetic simulations predict that both PR unit cells should provide a high co-polarization reflection coefficient (Ryx> −1 dB) and 180° phase difference over an ultra-wide bandwidth. Thermal simulations predict that the PR unit cells should tolerate a continuous-wave illumination power density level of at least 22 W/cm2, while keeping the PIN diode switch junction temperatures below 85% of their maximum rated values.
使用偏振旋转反射模式的高功率、超宽带、1位反射阵列单元
提出了两种用于高功率微波应用的超宽带、可重构反射偏振旋转(PR)元件。虽然一种结构提供更宽的带宽,但另一种结构的制造难度较小,并且在机械上可能更坚固。所提出的结构使用两个偶极天线连接到一个开关电路,在接地面的背面集成了四个商用PIN二极管。在PIN二极管的不同通断组合状态之间切换提供0°或180°相移,产生可调谐的1位相移单元。全波电磁模拟预测,这两种PR单元在超宽带上都具有较高的共极化反射系数(Ryx> - 1 dB)和180°相位差。热模拟预测,PR单元电池应该能够承受至少22 W/cm2的连续波照明功率密度水平,同时保持PIN二极管开关结温度低于其最大额定值的85%。
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