Nonuniformity study for silicon-based BIB terahertz detectors

Abstract

Silicon-based blocked-impurity-band (BIB) array detector has been fabricated. The dark current densities versus anode bias with anode bias scanning from -4V to 4V for four different pixels on a single array chip have been measured in order to study the nonuniformity of terahertz array detector. It has been demonstrated that the minimum nonuniformity of 7.6% can be achieved for our fabricated Silicon-based BIB array detector.