P2G-2 Capacitively Coupled VHF Silicon Bulk Acoustic Wave Filters

Qishu Qin, S. Pourkamali, F. Ayazi
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引用次数: 4

Abstract

This work reports on the implementation of VHF MEMS bandpass filters by capacitive coupling of Silicon Bulk Acoustic wave Resonators (SiBAR) fabricated using the HARPSS-on-SOI fabrication process. Such resonators operate in their horizontal width extensional modes with quality factors (Q) in the range of 10,000-100,000. With the comparatively large electrode area and deep submicron capacitive transduction gaps these resonators have also exhibited relatively low impedances. Compared with existing technologies such as quartz crystals, SAW filters, capacitively-coupled SiBARs have demonstrated the smallest form factor high-Q filters in the VHF range that can be integrated with silicon electronics on a common substrate. Filters with center frequencies up to 150MHz are demonstrated by coupling of two SiBAR resonators in their fundamental width- extensional modes. Tuning of the filter bandwidth by varying the DC polarization voltages on the resonators is investigated.
P2G-2电容耦合甚高频硅体声波滤波器
这项工作报告了利用HARPSS-on-SOI制造工艺制造的硅体声波谐振器(SiBAR)的电容耦合实现VHF MEMS带通滤波器。这种谐振器在其水平宽度扩展模式下工作,质量因子(Q)在10,000-100,000范围内。这些谐振器具有较大的电极面积和较深的亚微米电容转导间隙,并且具有相对较低的阻抗。与现有的石英晶体、SAW滤波器等技术相比,电容耦合sibar已经证明了VHF范围内尺寸最小的高q滤波器,可以与普通衬底上的硅电子器件集成。中心频率高达150MHz的滤波器通过两个SiBAR谐振器在其基本宽度-扩展模式下的耦合进行了演示。研究了通过改变谐振器上的直流极化电压来调整滤波器带宽的方法。
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