Computationally inexpensive simulations for nanoimprint lithography

H. Taylor
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Abstract

Among emerging nanopatterning techniques, nanoimprint lithography (NIL) is especially promising because the equipment required is relatively inexpensive. In NIL, a patterned template mechanically deforms a polymer film or resin on the surface of a semiconductor wafer (as shown in Figure 1) to transfer features and create an etching mask for subsequent processing. The prospect of reduced patterning costs enabled by this technique (compared with, for example, extreme-UV lithography) is particularly attractive to manufacturers of NAND flash memory, i.e., the predominant form of non-volatile memory used in electronic devices today. NAND flash memory does not require power to store data and is the key component of solidstate hard disk drives and camera memory cards. Nonetheless, to increase its adoption, it is crucial to reduce the cost per bit and, for this reason, there is an exceptionally strong incentive to reduce manufacturing costs. NIL is a promising approach for realizing a reduction in NAND flash manufacturing costs, but there are a number of associated challenges. For example, it is particularly difficult to achieve good inter-layer alignment and template lifetimes, and to minimize the pattern defectivity. Defectivity is the issue most in need of process modeling. There are two contributors to defectivity: random contributions (including particles or spatial errors in the dispensing of resin droplets onto the wafer); and systematic contributions, e.g., incomplete template-cavity filling, variation of the resin’s residual-layer thickness (between the template and the substrate), and template–resin adhesion. To ensure the successful use of NIL for fabricating NAND flash memory, it is necessary to predict any voids that may arise beneath the template after the dispensed droplets have spread Figure 1. Schematic illustration of nanoimprint lithography, using a droplet-dispensed resin.6 (1) A patterned quartz template is bowed and brought into contact with inkjet-dispensed pL-volume resin droplets on the wafer. (2) The curvature of the template is then relaxed to spread droplets and fill cavities. (3) After a dwell period (to enable residual layer homogenization), the resin is cured by UV exposure through the template.
计算成本低廉的纳米压印光刻模拟
在新兴的纳米图案技术中,纳米压印光刻(NIL)尤其有前途,因为所需的设备相对便宜。在NIL中,有图案的模板机械地使半导体晶圆表面的聚合物薄膜或树脂变形(如图1所示),以转移特征并为后续处理创建蚀刻掩模。这种技术(与极紫外光刻技术相比)降低图案成本的前景对NAND闪存制造商特别有吸引力,NAND闪存是当今电子设备中使用的主要形式的非易失性存储器。NAND闪存不需要电源来存储数据,是固态硬盘驱动器和相机存储卡的关键组件。尽管如此,为了提高其采用率,降低每比特的成本至关重要,因此,降低制造成本的动机非常强烈。NIL是实现NAND闪存制造成本降低的一种很有前途的方法,但也存在一些相关的挑战。例如,实现良好的层间对齐和模板生命周期以及最小化模式缺陷是特别困难的。缺陷是过程建模中最需要解决的问题。造成缺陷的因素有两个:随机因素(包括树脂滴在晶圆上分配时的颗粒或空间误差);系统的贡献,例如,不完整的模板腔填充,树脂的剩余层厚度的变化(在模板和基材之间),以及模板-树脂粘附。为了确保NIL成功用于制造NAND闪存,有必要预测在分配的液滴扩散后模板下可能出现的任何空隙(图1)。使用微滴分配树脂的纳米压印光刻原理图(1)将有图案的石英模板弯曲,使其与晶圆片上喷墨分配的pl体积树脂液滴接触。(2)然后放松模板的曲率以扩散液滴并填充空腔。(3)静置一段时间后(使残余层均质),通过模板进行紫外线曝光固化树脂。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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