Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN via Mg Co-doped with 4d-Element (In)

Zhiqiang Liu, X. Yi, Junxi Wang, I. Ferguson, N. Lu, Jinmin Li
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引用次数: 3

Abstract

1 Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100086, China 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 3 Lyles School of Civil Engineering, Birck Nanotechnology Center, Sustainable Materials and Renewable Technology (SMART) Lab, Purdue University, West Lafayette, IN 47906 USA 4 Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla MO 65409, USA *E-mail: lzq@semi.ac.cn 1,2* 1,2 1,2 4 3 1,2 Zhiqiang Liu, Xiaoyan Yi, Junxi Wang, Ian Ferguson, Na Lu and Jinmin Li View Article Online
Mg共掺杂4d-Element (in)在GaN中高效受体电离的理论分析与实验实现
1中国科学院半导体研究所固态照明研究与发展中心,北京100086 2中国科学院大学材料科学与光电子工程中心,北京100049 3普渡大学莱尔斯土木工程学院,Birck纳米技术中心,可持续材料与可再生技术(SMART)实验室,西拉斐特47906美国*E-mail: lzq@semi.ac.cn 1,2* 1,2 1,2 2 1, 3 1,2刘志强,易晓燕,王俊喜,Ian Ferguson,卢娜,李金民
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