45nm CMOS 8Ω Class-D audio driver with 79% efficiency and 100dB SNR

S. Samala, Vineet Mishra, Kalyan Chekuri Chakravarthi
{"title":"45nm CMOS 8Ω Class-D audio driver with 79% efficiency and 100dB SNR","authors":"S. Samala, Vineet Mishra, Kalyan Chekuri Chakravarthi","doi":"10.1109/ISSCC.2010.5434036","DOIUrl":null,"url":null,"abstract":"Integrating audio and power management into a system-on-chip (SoC) is of interest due to reduced board area and cost. Integrated Class-D audio drivers need to drive high voltages to deliver high power across small loads; 525mW (5.8Vpp differential) across an 8Ω load working off the battery. Absence of high-voltage transistors along with high device noise (flicker), device mismatch and leakage pose design challenges in 45nm CMOS.","PeriodicalId":6418,"journal":{"name":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","volume":"126 1","pages":"86-87"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2010.5434036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

Abstract

Integrating audio and power management into a system-on-chip (SoC) is of interest due to reduced board area and cost. Integrated Class-D audio drivers need to drive high voltages to deliver high power across small loads; 525mW (5.8Vpp differential) across an 8Ω load working off the battery. Absence of high-voltage transistors along with high device noise (flicker), device mismatch and leakage pose design challenges in 45nm CMOS.
45纳米CMOS 8Ω d类音频驱动器,效率为79%,信噪比为100dB
将音频和电源管理集成到片上系统(SoC)中,可以减少电路板面积和成本。集成的d类音频驱动器需要驱动高电压,以便在小负载下提供高功率;525mW (5.8Vpp差),通过8Ω负载工作在电池上。缺乏高压晶体管以及高器件噪声(闪烁),器件失配和泄漏给45nm CMOS的设计带来了挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信