Hydrogen content and the goal of stable efficient amorphous-silicon-based solar cells

Solar Cells Pub Date : 1991-05-01 DOI:10.1016/0379-6787(91)90057-V

C.M. Fortmann, S.S. Hegedus, T.X. Zhou, B.N. Baron

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引用次数: 5

Abstract

Solar cell and film analyses indicate that electron mobility in amorphous hydrogenated silicon-germanium decreases with increasing hydrogen $C_{H}$ and germanium $C_{Ge}$ contents. The hole mobility-lifetime product μτ is less dependent on germanium content than the electron μτ product. Thin (less than 1000 Å) graded band gap alloy solar cells were prepared by photochemical vapor deposition with greater than 5% efficiency (at air mass 1.5) and 40% quantum efficiency at 800 nm. Unalloyed a-Si:H with $C_{H}$ values of 7% and 11% having similar annealed state dangling bond densities was prepared by photochemical vapor deposition. Under light exposure or high temperature current injection, high $C_{H}$ materials were markedly less stable.

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氢含量和稳定高效的非晶硅基太阳能电池的目标

太阳电池和薄膜分析表明，随着氢CH和锗CGe含量的增加，非晶氢化硅-锗中的电子迁移率降低。空穴迁移寿命积μτ对锗含量的依赖性较小，对电子μτ积的依赖性较小。采用光化学气相沉积技术制备了薄层(小于1000 Å)梯度带隙合金太阳能电池，在800 nm处效率大于5%(空气质量为1.5)，量子效率大于40%。采用光化学气相沉积法制备了CH值为7%和11%且具有相似退火态悬垂键密度的非合金a-Si:H。在光照或高温电流注入下，高CH材料的稳定性明显降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Solar Cells

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