Imprint of ferroelectric PLZT thin-film capacitors with lanthanum strontium cobalt oxide electrodes

Abstract

The ferroelectric imprint is measured on thin-film PLZT capacitors with lanthanum strontium cobalt oxide top and bottom electrodes. The data show a significant amount of imprint with a combined elevated temperature and alternating (unipolar) voltage stress. No imprint was observed on samples that were temperature stressed without external bias.