A Standard Block of “Series Connected SiC MOSFET” for Medium/High voltage converter

Abstract

The goal of this paper is to significantly improve the efficiency and power density of medium voltage drive and high-power converters. To achieve the goal, the proposed approach is to replace the high voltage Si IGBT by series connected SiC MOSFETs. Specifically, a game changing and universally applicable standard block of "series connected SiC MOSFET" with excellent dynamic voltage sharing and high reliability is proposed. The core technology in the block is the current source gate driver with device synchronization function. A down-scaled medium voltage drive prototype has been developed to demonstrate the feasibility and advantages of the standard block.