High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability

IF 1 4区工程技术 Q4 COMPUTER SCIENCE, INTERDISCIPLINARY APPLICATIONS

Compel-The International Journal for Computation and Mathematics in Electrical and Electronic Engineering Pub Date : 2023-06-25 DOI:10.1109/COMPEL52896.2023.10221057

Qi Zhu

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引用次数: 0

Abstract

The conventional trench termination for the 4HSiC sidewall-implanted Super Junction device has relatively low avalanche capability and the devices can fail destructively under abnormal operating conditions. In this paper, a novel high-k dielectric assisted trench termination is proposed. The high-k dielectric TiO2 is incorporated into the SiO2-filled trench. TCAD simulations are conducted to validate the efficacy of the proposed termination. The results show that with the proposed termination, the peak electric field is pushed to the edge of the TiO2 region, preventing breakdown at the corners of the active region edge; at the same time, the leakage current flows uniformly from the active region, thus improving the avalanche current; in addition, the addition of TiO2 to the terminator does not reduce the breakdown voltage. Moreover, the dimensions of the TiO2 are optimized in terms of the maximum current density. By taking the dielectric strength into consideration, the optimum depth and length of the TiO2 region are found to be 0.6μm and 2μm, respectively.

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提高雪崩能力的高k介电辅助4H-SiC超级结器件沟槽端接

4HSiC侧壁植入超级结器件的传统沟槽端接具有较低的雪崩能力，在异常工作条件下器件会发生破坏性失效。本文提出了一种新型的高k介电辅助沟槽终端。将高k电介质TiO2掺入到填充sio2的沟槽中。通过TCAD仿真验证了所提出的终止方案的有效性。结果表明:采用所提出的终止方式，峰值电场被推至TiO2区边缘，防止了活性区边缘的角击穿;同时，泄漏电流均匀地从有源区流出，从而改善了雪崩电流;此外，在终结端加入TiO2并不会降低击穿电压。此外，根据最大电流密度对TiO2的尺寸进行了优化。考虑介电强度，TiO2区域的最佳深度为0.6μm，长度为2μm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Compel-The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 工程技术-工程：电子与电气

CiteScore

1.60

自引率

0.00%

发文量

124

审稿时长

4.2 months

期刊介绍： COMPEL exists for the discussion and dissemination of computational and analytical methods in electrical and electronic engineering. The main emphasis of papers should be on methods and new techniques, or the application of existing techniques in a novel way. Whilst papers with immediate application to particular engineering problems are welcome, so too are papers that form a basis for further development in the area of study. A double-blind review process ensures the content''s validity and relevance.