Morphology and Film Growth in CVD Reactions

Abstract

The paper reports on three major aspects of CVD reactor simulation: 1) Modeling of transport phenomena in conventional CVD and their effect on the film growth; 2) Modeling of plasma enhanced CVD and deposition of thin films; 3) Modeling of film growth and analysis of stability and morphology case studies. Case studies involve deposition of boron on W wire, deposition of Si-H and morphology development for a typical CVD reaction. Numerical methods of simulation are discussed in detail for each category mentioned above.