An hybrid finite element method for a quasi-variational inequality modeling a semiconductor

IF 1.8 4区管理学 Q3 OPERATIONS RESEARCH & MANAGEMENT SCIENCE

Rairo-Operations Research Pub Date : 2022-10-26 DOI:10.1051/ro/2022187

A. Nachaoui, M. Nachaoui

引用次数: 1

Abstract

A problem of determining the characteristics of a semiconductor can be reduced to the study of the quasi-variational inequality, [1] where the obstacle M(u) is the solution of an elliptic problem depending on u. We present here an hybrid finite element method for the computation of obstacle M(u) and we discuss some numerical aspects appearing in its approximation.

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半导体拟变分不等式的混合有限元方法

确定半导体特性的问题可以归结为准变分不等式的研究[1]，其中障碍物M(u)是依赖于u的椭圆问题的解。本文提出了一种计算障碍物M(u)的混合有限元方法，并讨论了其近似中出现的一些数值方面。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Rairo-Operations Research 管理科学-运筹学与管理科学

CiteScore

3.60

自引率

22.20%

发文量

206

审稿时长

>12 weeks

期刊介绍： RAIRO-Operations Research is an international journal devoted to high-level pure and applied research on all aspects of operations research. All papers published in RAIRO-Operations Research are critically refereed according to international standards. Any paper will either be accepted (possibly with minor revisions) either submitted to another evaluation (after a major revision) or rejected. Every effort will be made by the Editorial Board to ensure a first answer concerning a submitted paper within three months, and a final decision in a period of time not exceeding six months.