Characterization and modeling of InP solar cells

Abstract

InP solar cells were modeled before and after proton irradiation using a PC-1D computer model. It was necessary to include bandgap narrowing in the n/sup +/ emitter to match the calculated and measured quantum efficiency, leakage current, and cell data simultaneously. A high-efficiency ( approximately=18.2%, AM0) InP solar cell was fabricated and modeled successfully. Guidelines are provided for achieving greater than 22% efficiency for InP cells. A 10 MeV proton irradiation with a dose of 2*10/sup 13/ cm/sup -2/ reduces the cell performance of a 16.3% cell to 11% by introducing the deep levels at an E/sub v/ of +0.29 eV and an E/sub v/ of +0.52 eV. Modeling showed that this performance degradation is associated with a decrease in bulk lifetime from 0.75 to 0.028 ns with no appreciable change in front surface recombination velocity.<>