Exploration of poly Irms based on 40nm technology node

2017 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2017-03-01 DOI:10.1109/CSTIC.2017.7919849

Xiangfu Zhao, W. Chien, Kelly Yang

引用次数: 0

Abstract

The Root Mean Square current (Irms) has been explored on both N doped un-silicided poly and silicided poly at 40nm technology node. It is found that poly resistance-current (RI) curves show an initially high resistance due to Schottky Rectifying contact. However, poly Irms can be estimated similar to metal Irms. Parameters for poly Irms calculation is provided on the basis of 5°C Joule heating.

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基于40nm技术节点的多晶硅的探索

研究了N掺杂非硅化多聚体和硅化多聚体在40nm工艺节点上的均方根电流(Irms)。发现由于肖特基整流接触，多电阻-电流(RI)曲线显示出初始高电阻。然而，poly Irms的估计与金属Irms相似。在5°C焦耳加热的基础上，提供了poly Irms计算的参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2017 China Semiconductor Technology International Conference (CSTIC)

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