A L-Band Class AB Power Amplifier Based on the Lateral Double-diffused Metal Oxide Semiconductor Device

2021 6th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2021-10-22 DOI:10.1109/ICICM54364.2021.9660355

Qicong Liang, Jiafei Yao, Yufeng Guo, Zhikuang Cai, Mingyuan Gu, M. Sun

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Abstract

This paper presents a Class AB power amplifier operating at the frequency band of 1.91 GHz-2.01 GHz. The lateral double-diffused metal oxide semiconductor (LDMOS) MW6S004N manufactured by Freescale is used to design the power amplifier for the high efficiency, good linearity and low cost features. The design procedure and evaluation of the presented power amplifier are described. The $\pi$-network topology and two-stage low-pass filter network are used to design the proposed input and output matching network, which are converted to the optimum source impedance and load impedance to enhance the power transmission performance of the power amplifier. The proposed matching networks enable improvements in both linearity and efficiency. The simulation results show that the output power $P_{1 dB}$ is greater than 37.5 dBm, the power added efficiency is 52.5 % for the optimized power amplifier circuit with 1.96 GHz frequency. With two tone input signals, the power amplifier delivers 35 dBm output power, IMD3 of below than -20 dBc, IMD5 of below than -34 dBc.

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基于横向双扩散金属氧化物半导体器件的l波段AB类功率放大器

本文设计了一种工作在1.91 GHz-2.01 GHz频段的AB类功率放大器。采用飞思卡尔公司的横向双扩散金属氧化物半导体(LDMOS) MW6S004N设计功率放大器，具有效率高、线性度好、成本低等特点。介绍了该功率放大器的设计过程和性能评价。采用$\pi$网络拓扑结构和两级低通滤波器网络设计输入输出匹配网络，并将输入输出匹配网络转换为最佳源阻抗和负载阻抗，以提高功率放大器的功率传输性能。所提出的匹配网络可以提高线性度和效率。仿真结果表明，优化后的功率放大电路在1.96 GHz频率下，输出功率P_{1 dB}$大于37.5 dBm，功率增加效率为52.5%。采用双音调输入信号，输出功率为35dbm, IMD3小于-20 dBc, IMD5小于-34 dBc。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)

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